发明名称 CRUCIBLE FOR CRYSTAL GROWTH, AND SEMICONDUCTOR SINGLE CRYSTAL GROWN USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a crucible for crystal growth suppressing the generation of twin crystal defects in a vertical boat method. SOLUTION: In the crucible 1 for crystal growth having a cylindrical straight trunk part 6 provided with a truncated cone shaped shoulder part 5 on the one side, and a narrow diameter part 4 for containing a seed crystal 3 provided at the tip of the shoulder part 5, which grows a crystal raw material melt housed in the shoulder part 5 and the straight trunk part 6 from the narrow diameter part 4 toward the straight trunk part 6 into a crystal, a plurality of concave grooves 8 are formed with a predetermined distance on the inner wall of the shoulder part 5 approximately vertically to the crystal growing direction. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009215112(A) 申请公布日期 2009.09.24
申请号 JP20080061209 申请日期 2008.03.11
申请人 HITACHI CABLE LTD;HITACHI DENSEN MEKUTEKKU KK 发明人 FUJISAKI INAO;MIZUNIWA SEIJI;SEKI MINORU
分类号 C30B11/00 主分类号 C30B11/00
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