发明名称 |
Apparatus for generating gas plasma, gas composition for generating plasma and method for manufacturing semiconductor device using the same |
摘要 |
A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.
|
申请公布号 |
US2009229758(A1) |
申请公布日期 |
2009.09.17 |
申请号 |
US20090382328 |
申请日期 |
2009.03.13 |
申请人 |
MIN YOUNG-MIN;CHOI DAE-KYU;BAE DO-IN;YANG YUN-SIK;HWANG WAN-GOO;KIM JIN-MAN |
发明人 |
MIN YOUNG-MIN;CHOI DAE-KYU;BAE DO-IN;YANG YUN-SIK;HWANG WAN-GOO;KIM JIN-MAN |
分类号 |
H01L21/3065;C09K13/00;H01J37/32;H01L21/311;H05H1/30 |
主分类号 |
H01L21/3065 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|