发明名称 Apparatus for generating gas plasma, gas composition for generating plasma and method for manufacturing semiconductor device using the same
摘要 A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.
申请公布号 US2009229758(A1) 申请公布日期 2009.09.17
申请号 US20090382328 申请日期 2009.03.13
申请人 MIN YOUNG-MIN;CHOI DAE-KYU;BAE DO-IN;YANG YUN-SIK;HWANG WAN-GOO;KIM JIN-MAN 发明人 MIN YOUNG-MIN;CHOI DAE-KYU;BAE DO-IN;YANG YUN-SIK;HWANG WAN-GOO;KIM JIN-MAN
分类号 H01L21/3065;C09K13/00;H01J37/32;H01L21/311;H05H1/30 主分类号 H01L21/3065
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