| 发明名称 |
SEMICONDUCTOR MEMORY ELEMENT |
| 摘要 |
A semiconductor memory element includes: a tunnel insulating film formed on a semiconductor substrate; a HfON charge storage film with Bevan clusters formed on the tunnel insulating film; a blocking film formed on the HfON charge storage film; and a gate electrode formed on the blocking film.
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| 申请公布号 |
US2009212346(A1) |
申请公布日期 |
2009.08.27 |
| 申请号 |
US20080233073 |
申请日期 |
2008.09.18 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
INO TSUNEHIRO;YASUDA NAOKI;MURAOKA KOICHI;FUJIKI JUN;KIKUCHI SHOKO;ARIYOSHI KEIKO |
| 分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
| 代理机构 |
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代理人 |
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