PLASMA TREATMENT APPARATUS OF SUBSTRATE AND PLASMA TREATMENT METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus of a substrate, which can accurately process a substrate by increasing a radical species density suitable for substrate processing, can control ion radical energy to an energy value suitable for substrate processing and to a small band energy width, and can form an excellent embedded film, and to provide a plasma treatment method thereof.

SOLUTION: The plasma treatment apparatus includes: a substrate holding electrode 22 and an opposite electrode 23 which are disposed in a chamber 21; a high-frequency generator 27 for applying a high frequency of ≥50 MHz to the substrate holding electrode 22; a DC negative pulse generator 29 for applying a DC negative pulse voltage so that the voltage is superimposed over the high frequency; and a controller 30 for controlling so that the high frequency can be intermittently applied and the DC negative pulse voltage can be intermittently applied in response to a timing of turning ON/OFF the high frequency.

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