MAGNETIC DOMAIN WALL MOTION DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

摘要

A magnetic domain wall motion device is provided with a magnetization recording layer (10) having a domain wall (DW) formed of a ferromagnetic film. The magnetization recording layer (10) includes a pair of end regions (11-1, 11-2), the magnetization directions of which are fixed, and a central region (12) which is disposed between the pair of end regions (11-1, 11-2) and in which the domain wall (DW) moves. A first trap site (TS1) at which the domain wall (DW) is trapped is formed at the boundaries between the end regions (11-1, 11-2) and the central region (12). Moreover, at least one second trap site (TS2) at which the domain wall (DW) is trapped is formed within the central region (12).