发明名称 Method To Improve Mask Critical Dimension Uniformity (CDU)
摘要 A method and system for fabricating a substrate is disclosed. First, a plurality of process chambers are provided, at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate and at least one of the plurality of process chambers containing a plasma filtering plate library. A plasma filtering plate is selected and removed from the plasma filtering plate library. Then, the plasma filtering plate is inserted into at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate. Subsequently, an etching process is performed in the substrate.
申请公布号 US2009206057(A1) 申请公布日期 2009.08.20
申请号 US20080031501 申请日期 2008.02.14
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HUANG I-HSIUNG;LU CHI-LUN;LEE HENG-JEN;CHIN SHENG-CHI;KU YAO-CHING
分类号 C23F1/08 主分类号 C23F1/08
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