发明名称 CRYSTAL-GROWING FURNACE WITH HEATING IMPROVEMENT STRUCTURE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a crystal-growing furnace with a heating improvement structure having a furnace body, a supporting table, a top heater and a bottom heater. <P>SOLUTION: This crystal-growing furnace with the heating improvement structure includes the furnace body 1, the support table 2, the top heater 3 and the bottom heater 4. When a silicon material around the top heater is melted, molten silicon slurry directly flows into a space between particles of the silicon material. Thus, energy absorption of an internal part of the silicon material is expedited. As a result of it, a desirable cycle is established to expedite melting of the whole silicon material in a crucible 7. The crucible is directly heated at the bottom by the bottom heater so as to save energy and time consumed by the crystal-growing furnace by enhance melting efficiency of the silicon material in the crucible. Further, since both of the top and bottom heaters are symmetrical with each other, the crucible can be uniformly heated. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009180495(A) 申请公布日期 2009.08.13
申请号 JP20080290654 申请日期 2008.11.13
申请人 GREEN ENERGY TECHNOLOGY INC 发明人 LEW SHIOW-JENG;LIN HUR-LON
分类号 F27B14/14;C01B33/02;F27B14/06 主分类号 F27B14/14
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