| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element capable of suppressing the lowering of the luminous efficiency of a semiconductor laser element, and to provide a production method therefor. SOLUTION: This surface emitting type nitride semiconductor laser element 30 (nitride semiconductor laser element) includes a semiconductor laser element layer 12 formed on a main surface including a (1-10-4) face of an n-type GaN substrate 11; and having a light emitting layer 15; and a light emitting face 30a, formed in a terminal part of the semiconductor laser element layer 12 having a light-emitting layer 15, and includes a (1-101) face. The semiconductor laser element 30 further includes a reflecting face 30c formed in a region opposite to the light emitting face 30a and comprising a (000-1) face, extending with an incline of an angleθ<SB>1</SB>(=about 65°) relative to the main face ((1-10-4)face) of the n-type GaN substrate 11. COPYRIGHT: (C)2009,JPO&INPIT
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