发明名称 |
METHOD OF FORMING RESIST PATTERN BY NANOIMPRINT LITHOGRAPHY |
摘要 |
A method of forming a resist pattern of high aspect ratio excelling in etching resistance by the use of nanoimprint lithography. The method of forming a resist pattern by nanoimprint lithography comprises the steps of disposing organic layer (4) on support (1); providing resist layer (2) on the organic layer (4) with the use of chemical amplification type negative resist composition containing silsesquioxane resin (A); pressing light transmission allowing mold (3) with partial light shielding portion (5) against the resist layer (2) and thereafter carrying out exposure from the upside of the mold (3); and detaching the mold (3).
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申请公布号 |
US2009189317(A1) |
申请公布日期 |
2009.07.30 |
申请号 |
US20070303434 |
申请日期 |
2007.05.30 |
申请人 |
TOKYO OHKA KOGYO CO., LTD |
发明人 |
SATO KAZUFUMI;YAMADA TOMOTAKA |
分类号 |
B29C59/16;B81C99/00 |
主分类号 |
B29C59/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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