发明名称 |
METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE MANUFACTURED USING THE METHOD |
摘要 |
There are provided a method of manufacturing a nitride semiconductor light emitting device and a nitride semiconductor light emitting device manufactured using the same. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention includes: forming a mask layer on a substrate; removing a portion of the mask layer to form openings provided as regions where light emitting structures are formed; forming a light emitting structure by sequentially growing a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer on the substrate through each of the openings of the mask layer; and forming first and second electrodes to be electrically connected to the first and second conductivity type nitride semiconductor layers, respectively.
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申请公布号 |
US2009173965(A1) |
申请公布日期 |
2009.07.09 |
申请号 |
US20080249049 |
申请日期 |
2008.10.10 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
SHIM HYUN WOOK;KIM YONG CHUN;KANG JOONG SEO |
分类号 |
H01L33/00;H01L33/20 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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