| 摘要 |
In a bolometer-type THz-wave detector 1 in a micro-bridge structure in which a temperature detecting portion 14 (diaphragm) including a bolometer thin film 7 is supported by a supporting portion 13 in a state suspended from a circuit substrate, a member (dielectric cover 11) made of a dielectric material for efficiently collecting a THz wave is added to an upper part of the temperature detecting portion 14, and when a refractive index of the dielectric cover 11 is n, thickness is t, and a wavelength of the THz wave is lambda, a setting is made so as to have at >lambda, and a gap between the dielectric cover 11 and the temperature detecting portion 14 is set at integral multiples of lambda/2. By this arrangement, an absorptance of the THz wave can be improved using a structure and manufacturing method of a bolometer-type infrared detector, and a high-performance bolometer-type THz-wave detector can be manufactured with a high yield.
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