| 摘要 |
<p>A manufacturing method of a flash memory device is provided to prevent exposure of a semiconductor substrate by preventing over etching during a process for removing a dielectric film formed on a side wall of a conductive film for a floating gate. A tunnel insulation film(101) and a conductive film(102) for a floating gate are formed on a semiconductor substrate(100). The conductive film for the floating gate is patterned. A dielectric film(105) and a capping film(106) are formed on a whole structure including the conductive film for the floating gate. The capping film is etched in order to expose a top part of the dielectric film. The exposed dielectric film is etched. The dielectric film is formed by successively laminating a first oxide film, a nitride film, and a second oxide film.</p> |
