| 摘要 |
An operating method of a nonvolatile memory device is provided to reduce a leakage current by increasing a threshold voltage of memory cells adjacent to a drain selecting line and a source selecting line of a nonvolatile memory device over 0V. An erasing process of a memory block is performed(S401). A verification and soft program about memory cells having a threshold voltage less than 0V is performed(S403). A verification and program about a first pass word line and a second pass word line of the memory block is performed in order to increase a threshold voltage of the memory cells connected to the first pass word line and the second pass word line over 0V(S405). A program command and a data reading command are performed(S407). A first pass voltage is applied to the first pass word line and the second pass word line. A program voltage is applied to a word line selected among word lines except for the first pass word line and the second pass word line. A second pass voltage is applied to a rest word line. The second pass voltage is lower than the first pass voltage. The program voltage is higher than the first pass voltage. |
