| 摘要 |
An image sensor and a manufacturing method thereof are provided to prevent the decline of sensitivity and saturation by forming the electric charge communications area between photodiode and readout circuit. A readout circuit(120) is formed in the first substrate(100). The first intermetallic dielectric layer(160) is formed on the first substrate. A wiring(150) electrically connected to the readout circuit is formed on the first intermetallic dielectric layer. The top metal is formed on the wiring. The image sensing part is formed on the top metal. An element isolation layer(110) is formed in the first substrate. The readout circuit comprises a transfer transistor(121), a reset transistor(123), and a drive transistor(125).
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