| 摘要 |
A manufacturing method of a semiconductor device is provided to improve gate control ability and a short channel effect by oxidizing and removing a lateral surface of a lower portion of an active part in order to form the lower portion narrower than the upper portion of the active part. An active part(AR) and an isolation layer for insulating the active part are formed on a semiconductor substrate(100). An auxiliary active pattern(100a) protruded from a surface of the isolation layer is formed by etching the isolation layer. A buffer pattern is formed to cover an upper part of the auxiliary active pattern which is protruded from the isolation layer. A lateral surface of the auxiliary active pattern is exposed from the isolation layer by etching the isolation layer. A groove(H) is formed along the exposed lateral surface of the auxiliary active pattern in order to reduce the width of the auxiliary active pattern. An active pattern(100b) having the groove is formed by removing the buffer pattern from the upper part of the auxiliary active pattern.
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