| 摘要 |
A dummy oxide film having a film thickness that is the same as that of a gate oxide film of a high voltage transistor is formed on a gate electrode of a transistor, and the dummy oxide film and the gate oxide film formed on a substrate surface are removed at the same time during etching for spacer formation. Thus, it becomes possible to stably form a spacer width that sufficiently satisfies device characteristics when manufacturing a semiconductor device where a low voltage transistor and a high voltage transistor are formed on the same semiconductor substrate.
|
