PLASMA OXIDIZING METHOD, PLASMA OXIDIZING APPARATUS, AND STORAGE MEDIUM

摘要

A silicon oxide film forming method includes a step of placing an object to be processed and having a surface having a projecting/recessed pattern and containing silicon in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen at a proportion of 5 to 20% under a processing pressure of 267 to 400 Pa in the processing vessel, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma.