发明名称 |
METHOD FOR MANUFACTURING GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP |
摘要 |
Disclosed is a method for manufacturing a group III nitride compound semiconductor light-emitting device having excellent emission characteristics with excellent productivity. Also disclosed are a group III nitride compound semiconductor light-emitting device and a lamp. Specifically disclosed is a method for manufacturing a group III nitride compound semiconductor light-emitting device, wherein an intermediate layer (12) composed of at least a group III nitride compound is arranged on a substrate (11), and then an n-type semiconductor layer (14) comprising a foundation layer (14a), a light-emitting layer (15) and a p-type semiconductor layer (16) are sequentially arranged on the intermediate layer (12). This method comprises a pretreatment step for plasma processing the substrate (11) and a sputtering step following the pretreatment step for forming the intermediate layer (12) on the substrate (11) by a sputtering method. |
申请公布号 |
KR20090057453(A) |
申请公布日期 |
2009.06.05 |
申请号 |
KR20097008091 |
申请日期 |
2007.09.26 |
申请人 |
SHOWA DENKO K.K. |
发明人 |
YOKOYAMA YASUNORI;SAKAI HIROMITSU;MIKI HISAYUKI |
分类号 |
H01L33/06;H01L21/20;H01L33/12;H01L33/32 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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