| 摘要 |
PROBLEM TO BE SOLVED: To separately form regions of different film thickness in metal silicide on the same substrate concerning technique for manufacturing a semiconductor device. SOLUTION: A first transistor Q1 is formed in the first region R1 on the main surface f1 of the silicon substrate 1, and the second transistor Q2 is in the second region R2. Then, a protective oxide film PT1 is formed on the main surface f1, and first dry etching DE1 is performed, so that a protective oxide film PT1 covering the first and second regions R1, R2 is removed. Then, the second dry etching DE2, where high frequency power is lower than that of the first dry etching DE1 and gas without containing the compound of carbon, hydrogen, or fluorine is used, is performed in the second region R2. Then, a metal film M1 is deposited on the main surface f1 of the silicon substrate 1 and thermal processing is performed, thereby forming the metal silicide film sc. COPYRIGHT: (C)2009,JPO&INPIT
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