| 摘要 |
A semiconductor device and a method of manufacture thereof are provided to increase the breakdown voltage between the junction area of the gate line of the device isolation region and the active region and reduce a distance between the active area and the gate line. The semiconductor device comprises a semiconductor substrate(100), a device isolation film(108'), and a gate line(GL'. GL) and an insulating layers(118, 120). The semiconductor substrate has the trench. The trench limits the device isolation region(ISO). The device isolation film is arranged in the trench. The device isolation film is comprised of the multilayer. The device isolation film defines the active region. The gate lines are arranged on the active region and device isolation film. The insulating layer is arranged on the active area and device isolation film in order to put on gate lines.
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