| 摘要 |
<p>A Group III nitride based semiconductor device is disclosed, comprising: a doped Group III nitride layer (14); and a gallium nitride based superlattice (16) directly on the doped Group III nitride layer, the gallium nitride superlattice being doped with an n-type impurity and having at least two periods of alternating layers of InxGa 1-X N and In Y Ga 1-Y N, where 0‰¤X<1 and 0 ‰¤Y<1 and X is not equal to Y and wherein a thickness of a first of the alternating layers is less than a thickness of a second of the alternating layers.</p> |
