IMIDE COMPLEX, METHOD FOR PRODUCING THE SAME, METAL-CONTAINING THIN FILM AND METHOD FOR PRODUCING THE SAME

摘要

Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M 1 (NR 1 )X 3 (L) r (2) and an alkali metal alkoxide (3):
(wherein M 1 represents niobium atom or tantalum atom, R 1 represents an alkyl group having from 1 to 12 carbon atoms, R 2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M 2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.