REVERSELY TAPERED CONTACT STRUCTURE COMPATIBLE WITH DUAL STRESS LINER PROCESS

摘要

PROBLEM TO BE SOLVED: To provide a reversely tapered contact structure that is compatible with a dual stress liner process. SOLUTION: A semiconductor device has a silicon layer, a transistor having an electrical connection region in the silicon layer, and a conductive plug formed on the electrical connection region while being in electrical contact with the region. The plug has sidewalls that taper inward as apart from the silicon layer. COPYRIGHT: (C)2009,JPO&INPIT