| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve plasma processing by efficiently removing undesirable deposits adhering to a DC ground electrode used in a DC voltage application method by means of a simple configuration to maintain a good DC ground function. <P>SOLUTION: In a plasma etching apparatus, a first high frequency for plasma generation and a second high frequency for ion attraction are applied from high frequency power sources 32 and 34 to a susceptor 12, respectively. Further, a DC voltage is applied from a variable DC power source 78 to an upper electrode 64 via a filter circuit 76. An annular DC ground part (DC ground electrode) 52 attached to an upper side surface of the susceptor 12 is connected to a filter circuit 54. This filter circuit 54 selectively allows a specific frequency component of intermodulation distortion generated in a plasma to flow to a ground line through a series resonant circuit. <P>COPYRIGHT: (C)2009,JPO&INPIT |
