| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To planarize a substrate or thin film having an uneven portion of several nm on a surface. <P>SOLUTION: The substrate 12 is disposed in a chamber 11 into which reactive gas is introduced. A projection portion 21 is irradiated with light having a wavelength longer than an absorption end wavelength of a wavelength band wherein gas molecules forming the reactive gas can be directly excited. The projection portion 21 is thus irradiated with the light and then the reactive gas is dissociated through a non-resonance process with near-field light generated in a local region of the projection portion 21 to generate active species. The activated active species and the projection portion 21 are subjected to chemical reaction to generate reaction products, and the projection portion 21 is removed. Nonresonant light for the reactive gas is used as the light, so etching proceeds only with the near-field light generated in the local region of the projection portion 21. Further, the projection portion 21 where the near-field light is generated is removed as the reaction proceeds, and a process for planarization automatically ends. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
