| 摘要 |
PROBLEM TO BE SOLVED: To provide a cross point resistive memory array. SOLUTION: The cross point memory array includes: a plurality of first electrode lines arranged parallel to each other; a plurality of second electrode lines crossing the first electrode lines and arranged parallel to each other; and a first memory resistor formed at intersections between the first electrode lines and the second electrode lines. At least one of the first electrode lines and the second electrode lines have a multi-layer structure having a first conductive layer and a second conductive layer including a noble metal. COPYRIGHT: (C)2009,JPO&INPIT |
