| 摘要 |
A one transistor type DRAM is provided to reduce a height of a contact plug by forming a contact plug contacted with a metal wiring of an island shape and a metal wiring of an island shape on a top of a drain of a transistor. A device isolation film(104) defining an active region is formed on a semiconductor substrate(100). A plurality of word lines(106) is formed on a top of the semiconductor substrate. A gate spacer is formed on both side walls of the word line. A source region and a drain region(108b) are formed inside an active region of both sides of the word line by performing a source/drain ion injection process. A plurality of first contact plugs is contacted in the source region and the drain region. A first metal wiring(112a) is formed on a top of the first contact plug contacted with the source region. A second metal wiring is formed on a top of the first contact plug contacted with the drain region. A second contact plug is formed on a top of the second metal wiring. A plurality of bit lines is formed on a top of the second contact plug.
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