发明名称 CONTROLLING REMOVAL RATE UNIFORMITY OF AN ELECTROPOLISHING PROCESS IN INTEGRATED CIRCUIT FABRICATION
摘要 An electropolishing process in integrated circuit fabrication on a wafer includes applying a stream of electrolyte to the wafer using a nozzle positioned adjacent to the wafer with a gap between the nozzle and the wafer. The removal rate uniformity of the electropolishing process is controlled by adjusting the gap between the nozzle and the wafer to adjust the removal rate profile of the stream of electrolyte applied by the nozzle.
申请公布号 WO2005059970(A3) 申请公布日期 2009.04.02
申请号 WO2004US42880 申请日期 2004.12.17
申请人 ACM RESEARCH, INC.;WANG, HUI;GUTMAN, FELIX;CHOKSHI, HIMANSHU, J. 发明人 WANG, HUI;GUTMAN, FELIX;CHOKSHI, HIMANSHU, J.
分类号 B23H3/00;B23H5/08;B24B37/04;B24B49/00;C25F3/02;C25F7/00;H01L 主分类号 B23H3/00
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