| 发明名称 |
IN-SITU CAP AND METHOD OF FABRICATING SAME FOR AN INTEGRATED CIRCUIT DEVICE |
| 摘要 |
An in-situ cap for an integrated circuit device such as a micromachined device and a method of making such a cap by fabricating an integrated circuit element on a substrate; forming a support layer over the integrated circuit element and forming a cap structure in the support layer covering the integrated circuit element. |
| 申请公布号 |
EP1366518(A4) |
申请公布日期 |
2009.03.11 |
| 申请号 |
EP20020713792 |
申请日期 |
2002.03.06 |
| 申请人 |
ANALOG DEVICES, INC. |
发明人 |
MARTIN, JOHN, R.;MORRISON, RICHARD, H., JR. |
| 分类号 |
B81B7/00;B81C1/00;B81B3/00;H01H57/00;H01H59/00;H01L21/3205;H01L21/768;H01L23/02;H01L23/52;H01L23/522 |
主分类号 |
B81B7/00 |
| 代理机构 |
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