发明名称 |
Semiconductor memory devices having contact pads with silicide caps thereon |
摘要 |
An integrated circuit device having a semiconductor substrate includes a gate structure on the semiconductor substrate. Source/drain regions are on opposite sides of the gate structure. A contact pad is on at least one of the source/drain region, and a silicide cap is on a surface of the contact pad opposite the respective source/drain region.
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申请公布号 |
US7501668(B2) |
申请公布日期 |
2009.03.10 |
申请号 |
US20060582926 |
申请日期 |
2006.10.18 |
申请人 |
SAMUNG ELECTRONICS CO., LTD. |
发明人 |
JANG SE-MYEONG;OH YONG-CHUL;JIN GYO-YOUNG |
分类号 |
H01L27/088;H01L27/10;H01L21/768;H01L21/8242;H01L23/485;H01L27/105;H01L27/108;H01L29/78 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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