| 摘要 |
An interlayer insulating film forming method of the semiconductor device is provided to prevent the generation of parasitic capacitance between the adjacent dummy patterns. An interlayer insulating film forming method of the semiconductor device includes the step of forming a metal layer on a substrate(10); the step for forming the photoresist pattern for the metal wiring on the metal layer; the step for defining the region where the metal wiring is not formed, and the region where the metal wirings are close; the step for forming the photoresist pattern which is reflow; the step for forming the insulating layer on the photoresist pattern image which is reflow; the step for removing the insulating layer and forming the insulating layer pattern; the step for forming the interlayer insulating film(12) on the substrate.
|
