| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polymer for cross-linking an anti-reflective film, which can be applied to an immersion lithography process and a damascene process and to provide an anti-reflective composition containing the polymer and a method for forming a photoresist pattern by using the polymer. <P>SOLUTION: An (acrylate/3,3-dithioethylpropene) polymer obtained by modifying a copolymer of an acrylate and acrolein by ethanethiol is excellent as the polymer for cross-linking the anti-reflective film, which contains a sulfur element and has a high refractive index. The anti-reflective composition comprises the polymer for cross-linking the anti-reflective film, a base resin for absorbing light, a thermal acid generator and an organic solvent. The anti-reflective composition can be used very suitably in the immersion lithography process using particularly an ArF light source having 193 nm wavelength and the damascene process when a semiconductor device is manufactured. <P>COPYRIGHT: (C)2009,JPO&INPIT |
