| 摘要 |
A voltage sensing circuit is provided to compensate for characteristic difference of a MOS(Metal Oxide Semiconductor) due to temperature variation. At least one driving of pull-up and pull down is performed in accordance with the level of an input voltage. A voltage sensing unit(10) outputs a sensing signal corresponding to the voltage level. A temperature compensated type pull-up current control unit(20) uses a temperature sensitive current varying element which can changes current amount in accordance with temperature variation. The temperature compensated type pull-up current control unit compensates change of pull-up driving current amount in accordance with the temperature variation. |
