发明名称 |
CMOS TRANSISTOR JUNCTION REGIONS FORMED BY A CVD ETCHING AND DEPOSITION SEQUENCE |
摘要 |
This invention adds to the art of replacement source-drain cMOS transistors. Processes may involve etching a recess in the substrate material using one equipment set, then performing deposition in another. Disclosed is a method to perform the etch and subsequent deposition in the same reactor without atmospheric exposure. In-situ etching of the source-drain recess for replacement source-drain applications provides several advantages over state of the art ex-situ etching. Transistor drive current is improved by: (1) Eliminating contamination of the silicon-epilayer interface when the as-etched surface is exposed to atmosphere and (2) Precise control over the shape of the etch recess. Deposition may be done by a variety of techniques including selective and non-selective methods. In the case of blanket deposition, a measure to avoid amorphous deposition in performance critical regions is also presented.
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申请公布号 |
US2009039390(A1) |
申请公布日期 |
2009.02.12 |
申请号 |
US20080250191 |
申请日期 |
2008.10.13 |
申请人 |
MURTHY ANAND;GLASS GLENN A;WESTMEYER ANDREW N;HATTENDORF MICHAEL L;WANK JEFFREY R |
发明人 |
MURTHY ANAND;GLASS GLENN A.;WESTMEYER ANDREW N.;HATTENDORF MICHAEL L.;WANK JEFFREY R. |
分类号 |
H01L29/778;H01L21/336 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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