发明名称 Process for producing semiconductor device
摘要 A process for semiconductor device production by which the reliability of connection with bumps can be easily heightened with higher certainty. The process for producing a semiconductor device comprising a substrate having bumps formed thereon, comprises covering the bumps with an adhesive film which has a modulus of elasticity (-55° C.) of from 100 MPa to 5 GPa and has a thickness corresponding to from 5 to 40% of the height of the bumps, and then disposing the adhesive film on the substrate so that the bumps pierce through the adhesive film and come to protrude therefrom.
申请公布号 US7487586(B2) 申请公布日期 2009.02.10
申请号 US20030737853 申请日期 2003.12.18
申请人 NITTO DENKO CORPORATION 发明人 MATSUMURA AKIKO;HOTTA YUJI
分类号 H01L21/60;H05K3/30;H01L21/48;H01L23/498;H05K3/34 主分类号 H01L21/60
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