GROUP III-V NITRIDE SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND GROUP III-V NITRIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a group III-V nitride semiconductor substrate and a method for manufacturing the substrate in which fluctuation in plane orientation of the substrate surface can be decreased by reducing warpage of the substrate in an as-grown state, and to provide a group III-V nitride semiconductor device using the above substrate and having excellent uniformity in the substrate plane.

SOLUTION: A light emitting element is fabricated by using a GaN self-standing substrate 10 and by forming an epitaxial layer comprising a GaN semiconductor crystal on the substrate, the substrate having a dislocation density of not more than 3×106cm-2on the back face of the substrate and showing decrease in the dislocation density by a rate of not more than 3×106cm-2/mm in the thickness direction from the back face to the top face of the substrate.

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