发明名称 METHOD TO MANUFACTURE A THIN FILM RESISTOR
摘要 A method for manufacturing a semiconductor device that method comprises forming a thin film resistor by a process that includes depositing a resistive material layer on a semiconductor substrate. The process also includes depositing an insulating layer on the resistive material layer, and performing a first dry etch process on the insulating layer to form an insulative body. The process further includes performing a second dry etch process on the resistive material layer to form a resistive body. The resistive body and the insulative body have substantially identical perimeters.
申请公布号 US2009023263(A1) 申请公布日期 2009.01.22
申请号 US20070779465 申请日期 2007.07.18
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 PHAN TONY;FLESSNER KYLE M.;MOLLAT MARTIN B.;WANG CONNIE;PAN ARTHUR;BEACH ERIC WILLIAM;KERAMIDAS MICHELLE R.;BURKS KAREN ELIZABETH
分类号 H01L21/02 主分类号 H01L21/02
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