| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor evaluation element, together with an evaluation circuit and evaluation method that use the same, capable of analytically estimating the DC fluctuated amount of an MOS transistor caused by formation of contact. SOLUTION: A semiconductor evaluation element, such as, an MOS transistor has a gate, a diffusion layer, a measureming contact, and a floating contact. The diffusion layer is formed on both sides of the gate, to be the source and the drain. The measuring contacts are provided respectively at positions separated away from the gate of the diffusion layer. The floating contact is provided between the gate and the measuring contact and connects the electrically an isolated metal layer and the diffusion layer. COPYRIGHT: (C)2009,JPO&INPIT |
