发明名称 Semiconductor device and its manufacture method capable of preventing short circuit of electrodes when semiconductor device is mounted on sub-mount substrate
摘要 A confronting surface of a substrate faces a first surface of a semiconductor element. Extension layers are formed on the substrate at positions facing electrodes on the semiconductor element. A levee film is disposed on one of the confronting surface and the first surface. Openings are formed through the levee film. Connection members which is filled but is not completely filled in the openings connect the electrodes and the extension layers.
申请公布号 US7470987(B2) 申请公布日期 2008.12.30
申请号 US20070681124 申请日期 2007.03.01
申请人 STANLEY ELECTRIC CO., LTD. 发明人 TSUCHIYA MASAHIKO;HORIO NAOCHIKA
分类号 H01L23/14;H01L23/48;H01L21/56;H01L21/60;H01L23/12;H01L23/32;H01L23/485;H01L23/492;H01L23/52;H01L33/30;H01L33/40;H01L33/44;H01L33/62;H05K3/28;H05K3/40 主分类号 H01L23/14
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