| 摘要 |
PROBLEM TO BE SOLVED: To improve bonding quality by preventing contaminants removed during cleaning from sticking again to a cleaned welding face, in bonding silicon wafers or the like by cleaning and activating the welding faces. SOLUTION: A bonding apparatus 1 includes a vacuum chamber 2, loading/unloading port 3, door 4, exhaust port 5, push rod 6, holding members 7, 8, beam irradiation equipment 9, 10, and dust collectors 11, 12. With this apparatus, a cleaning process and the bonding process are performed. The cleaning process is such that, in linearly irradiating wafers 13, 14 held on the holding members 7, 8 with atomic beams 15, 16 from the beam irradiation equipment 9, 10, the irradiation position of the atomic beams 15, 16 on the welding face of the wafers 13, 14 is moved from the irradiation region to the non-irradiation region of the atomic beam 15, 16, and that an angle formed by the atomic beams 15, 16 and the welding face of the wafers 13, 14 in the moving direction of the beam irradiation position is made larger than 90°and smaller than 180°. In the bonding process, the cleaned welding faces of the wafers 13, 14 are brought into contact with each other and bonded. COPYRIGHT: (C)2009,JPO&INPIT
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