| 摘要 |
PURPOSE:To obtain a memory cell of high density by forming part of the channel of a transistor adjacent to the side region of a condenser when a unit memory cell made of an MIS type condenser and a transfer gate transistor on the surface layer of a semiconductor substrate, thereby shortening the length of the gate electrode of the transistor. CONSTITUTION:A field insulating film 10 is formed with a channel stopper region 11 laid as primary layer at the periphery of a P type Si substrate 1, and an N<+> type region 7 which is connected to a digit line is formed in the vicinity of the other insulating film 10. Then, when an N type region 2 and a P type region 3 are diffused and formed on the surface layer of the substrate 1 surrounded by the region 7, two types of As and B ions are implanted, a heat treatment is performed, the B having larger diffusion coefficient is diffused deeply, and the region 2 is surrounded by the region 3. Thereafter, the gate electrode 5 of an MIS type condenser is formed through a gate insulating film 8 on the region 2, and the gate electrode 6 of a transistor is formed through an insulating film 9 on the lateral diffused region 4 of the region 3 swelled from the region 2. |
