| 摘要 |
PURPOSE:To obtain a high current amplification factor by forming the reverse conductive type first region and the reverse conductive type second region of higher density than the first region on the surface of one conductive type semiconductor layer. CONSTITUTION:After an N type density impurity layer 2 is formed on a P type silicon substrate 1, a low density N type epitaxial layer 3 is formed, a P type high density impurity is diffused in an isolation layer 4 from the surface of the layer 3. Then, a P type impurity is diffused to form a P type collector region 25, and high density P type emitter region 26 is formed. Then, an N type base electrode drawing region 7 is formed. Then, a hole is opened at an oxidized film 11 on the surface of the substrate, and electrode wirings 8, 9, 10 are formed. Thus, an emitter region 26 of a lateral P-N-P type transistor has high density layer. Accordingly emitter junction efficiency is high, and high current amplification factor can be obtained. |
