发明名称 |
EPITAXIAL STRENGTHENING OF CRYSTALS |
摘要 |
An epitaxial layer is used to place the surface of a crystal in compression so as to greatly increase the durability of the crystal such as a laser medium crystal. The layer may be applied by LPE or by VPE molecular beam epitaxy being specified. Increasing the strength of the crystals in this way allows them to operate with higher laser power output. |
申请公布号 |
GB2198056(B) |
申请公布日期 |
1990.09.26 |
申请号 |
GB19870025597 |
申请日期 |
1987.11.02 |
申请人 |
* UNITED STATES DEPARTMENT OF ENERGY |
发明人 |
ROBERT CRAIG * MORRIS;JOHN EDWARD * MARION II;DEVLIN MICHAEL * GUALTIERI |
分类号 |
C30B19/02;C30B29/28;C30B33/00 |
主分类号 |
C30B19/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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