| 摘要 |
PURPOSE:To reduce the wire capacity by forming a conductive channel on an oxide film on a guard region after a diffused layer is arranged on the surface of a well region under the conductive channel in the conductivity type thereto. CONSTITUTION:A P type well region 2, N<+> type source and drain regions 7 and 8, a gate electrode 9, a first guard region 11 surrounding an N channel IGFET 10 and a second guard region 12 are formed separately. Then, an N type diffused layer 15 is formed on a field portin of the N channel IGFET 10 separated from the first guard region 11. A conductive channel 17 made of deposited aluminum and polysilicon is formed on the layer 15. Thus, the layer 15 is kept from electric connection making it floating. |
