发明名称 CLAD TEXTURED METAL SUBSTRATE FOR FORMING EPITAXIAL THIN FILM THEREON AND METHOD FOR MANUFACTURING THE SAME
摘要 The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The present invention provides a clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a copper layer bonded to at least one face of the above described metallic layer, wherein the above described copper layer has a {100}<001> cube texture in which a deviating angle Deltaphi of crystal axes satisfies Deltaphi<=6 degree. The clad textured metal substrate for forming the epitaxial thin film thereon has an intermediate layer on the surface of the copper layer so as to form the epitaxial thin film thereon, wherein the above described intermediate layer preferably includes at least one layer of a material selected from the group consisting of nickel, nickel oxide, zirconium oxide, rare-earth oxide, magnesium oxide, strontium titanate (STO), strontium barium titanate (SBTO), titanium nitride, silver, palladium, gold, iridium, ruthenium, rhodium and platinum.
申请公布号 US2008261072(A1) 申请公布日期 2008.10.23
申请号 US20080101348 申请日期 2008.04.11
申请人 KASHIMA NAOJI;NAGAYA SHIGEO;SHIMA KUNIHIRO;HOSHINO HIROFUMI 发明人 KASHIMA NAOJI;NAGAYA SHIGEO;SHIMA KUNIHIRO;HOSHINO HIROFUMI
分类号 B32B15/20;C22F1/08;C23C14/34 主分类号 B32B15/20
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