| 摘要 |
<p>A method for manufacturing a flash memory device is provided to prevent diffusion of ions to a pre-metal dielectric in a metal wiring process. A gate(35) is formed on a semiconductor substrate(10). A spacer(52) is formed on a wall of the gate. A pre-metal dielectric(62) including a via hole is formed on the semiconductor substrate including the gate and the spacer. A TiN layer having a thickness of 30-50 Å is formed on the pre-metal dielectric including the via hole. A TiSiN layer is formed by implanting silane gas into the semiconductor substrate including the TiN layer. A contact is formed by burying the via hole including the TiSiN layer. The TiN layer has a thickness of 15-25 Å and is formed by performing two processes.</p> |
