| 摘要 |
PROBLEM TO BE SOLVED: To provide an oxide thin film and an oxide thin film device which can form a flat film, as well as, an n-type impurity is doped. SOLUTION: In an oxide thin film 2, as shown in Fig.1(b), a dope oxide layer 2a in which the n-type (electron conduction type) impurity is doped, and an undope oxide layer 2b in which the n-type impurity is not doped are laminated alternatively and repeatedly. In the oxide layer in which the n-type impurity is doped with high concentration, since its surface coarseness becomes large, before the surface coarseness caused by the dope oxide layer 2a becomes very large; by covering with the undope oxide layer 2b which can secure flat surface, a flat oxide film can be formed. COPYRIGHT: (C)2009,JPO&INPIT
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