发明名称 |
Formation of semiconductor devices to achieve <100> channel orientation |
摘要 |
A semiconductor device may include a substrate and an insulating layer formed on the substrate. A fin may be formed on the insulating layer. The fin may include a side surface and a top surface, and the side surface may have a <100> orientation. A first gate may be formed on the insulating layer proximate to the side surface of the fin.
|
申请公布号 |
US7432558(B1) |
申请公布日期 |
2008.10.07 |
申请号 |
US20040863392 |
申请日期 |
2004.06.09 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
AHMED SHIBLY S.;AN JUDY XILIN;DAKSHINA-MURTHY SRIKANTESWARA;TABERY CYRUS E.;YU BIN |
分类号 |
H01L29/72 |
主分类号 |
H01L29/72 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|