发明名称 MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY DEVICE
摘要 A magnetoresistance effect element having a free magnetic layer is provided. The free magnetic layer is formed in a laminate including a fixed magnetization layer having a fixed magnetization direction, a non-magnetic layer formed on the fixed magnetization layer, a first ferromagnetic layer, a non-magnetic metallic layer formed on the first ferromagnetic layer, and a second ferromagnetic layer formed on the non-magnetic metallic layer. The free magnetic layer includes magnetic recording regions, and in each region, the first ferromagnetic layer and the second ferromagnetic layer are coupled such that their magnetization directions are anti-parallel with each other, and one of the magnetic recording regions is opposite to the fixed magnetization layer with the non-magnetic layer therebetween.
申请公布号 US2008204946(A1) 申请公布日期 2008.08.28
申请号 US20080037366 申请日期 2008.02.26
申请人 FUJITSU LIMITED 发明人 OCHIAI TAKAO;ASHIDA HIROSHI;IBUSUKI TAKAHIRO;SHIMIZU YUTAKA
分类号 G11B5/33 主分类号 G11B5/33
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