| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a miniaturized semiconductor device operating with satisfactory heat dissipation characteristics. <P>SOLUTION: A semiconductor device includes: a first semiconductor element laminate 7 having first and second semiconductor elements 1, 2 laminated and fixed onto a heat-radiative support plate 5 sequentially; a second semiconductor element laminate 8 having third and fourth semiconductor elements 3, 4 laminated and fixed onto the support plate 5 sequentially; and a plurality of external leads 20 connected to the support plate 5. The support plate 5 has a side extended in the array direction of the first and second semiconductor element laminates 7, 8, and connects the plurality of external leads 20 to the outside of the side of the support plate 5 separated from the first and second semiconductor element laminates 7, 8 each. Reducing the occupation area of the support plate 5, the degree of integration can be improved simultaneously, and the quantity of heat generated in the semiconductor device can be suppressed. <P>COPYRIGHT: (C)2008,JPO&INPIT |
